MEMS cantilever Type
採用半導體製造工程的精密MEMS技術,構成3D MEMS Cantilever Probe,可降低雜訊且擁有相當優秀的電性特性, 應用於RFID和CMOS Image Sensor等產品。
採用半導體製造工程的精密MEMS技術,構成3D MEMS Cantilever Probe,可降低雜訊且擁有相當優秀的電性特性, 應用於RFID和CMOS Image Sensor等產品。
世界首位開發64 Site CMOS Image Sensor MEMS probe card
世界首位開發169 Site FWC(Full Wafer Contact) type CMOS Image Sensor MEMS probe card
世界首位開發169 Site FWC(Full Wafer Contact) type CMOS Image Sensor MEMS probe card
Application | CMOS Image Sensor (CIS) | DRAM | |
Illumination type | Diffusion filter | Lenz | – |
Min. probe pitch | 85㎛ | 64㎛ | |
Max. parallelism | 64para / 169para (FWC type) | 256para | |
Max. test speed | 2 Gsps (3.5 Gsps under development) | – | |
Temp. range | -40℃ ~ 150℃ |